Impurity centers

Defects in silicon, hydrogen: proceedings of Symposium A on Defects in Silicon, Hydrogen of the E-MRS Spring Conference, Strasbourg, France, 16-19 June, 1998

edited by J. Weber, A. Mesli.

Deep centers in semiconductors: a state-of-the-art approach

edited by Sokrates T. Pantelides.

Wpływ zewnętrznego pola elektrycznego na kubiczne centra jonów Eu²+ I Gd³+ w monokryształach typu MF₂ (M²+ = Ca²+, Cd²+, Sr²+, Ba²+ i Pb²+)

Nikos Guskos.

Fizika i materialovedenie poluprovodnikov s glubokimi urovni͡a︡mi

pod redakt͡s︡ieĭ V.I. Fistuli͡a︡ ; [avtory R.Kh. Akchurin ... et al.].

Crystal Growth from the Melt

Georg Muller

Vtorichnoe svechenie primesnogo t͡s︡entra kristalla: konspekt lekt͡s︡ii, prochit. v letneĭ shkole po li͡u︡minest͡s︡ent͡s︡ii, Baĭkal, Bukhta Pechanai͡a︡, ii͡u︡lʹ 1969

K.K. Rebane.

Shallow-Level Centers in Semiconductors: Proceedings of the 7th International Conference

C.A.J. Ammerlaan

Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon: symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.

editors, J.C. Mikkelsen, Jr. ... [et al.].

Deep centers in semiconductors: a state of the art approach

edited by Sokrates T. Pantelides.

Recombination and ionization processes at impurity centres in hot-electron semiconductor transport

L. Reggiani and V. Mitin.