Author

Contributions

  • Jones, R., Ph. D. - Contributor
  • North Atlantic Treaty Organization. Scientific Affairs Division. - Contributor
  • NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Silicon (1996 : Exeter, England) - Contributor

Publication

1996 - Kluwer Academic, Dordrecht

Language

English

Word Count

132,500 words, Guess

Page Count

530 pages

Identifiers

  • Open LibraryOL1003760M
  • ISBN-100792342968
  • OCLC Control Number36178527
  • Library of Congress Control Number96043441
  • Goodreads3968951

Classifications

  • DDC546/.683
  • LCCQC611.8.S5 E27 1996

Subjects

Topics

DefectsSiliconCongressesSemiconductorsOxygen contentSilicon crystalsSemiconductors -- Defects.

Series Statement

  • NATO ASI series. Partnership sub-series 3. High technology ;

Other Editions

  • Early stages of oxygen precipitation in siliconKluwer Academic1996-01-01

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