Early stages of oxygen precipitation in silicon
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Author
Contributions
- Jones, R., Ph. D. - Contributor
- North Atlantic Treaty Organization. Scientific Affairs Division. - Contributor
- NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Silicon (1996 : Exeter, England) - Contributor
Publication
1996 - Kluwer Academic, Dordrecht
Language
English
Word Count
132,500 words, Guess
Page Count
530 pages
Identifiers
- Open LibraryOL1003760M
- ISBN-100792342968
- OCLC Control Number36178527
- Library of Congress Control Number96043441
- Goodreads3968951
Classifications
- DDC546/.683
- LCCQC611.8.S5 E27 1996
Subjects
Topics
DefectsSiliconCongressesSemiconductorsOxygen contentSilicon crystalsSemiconductors -- Defects.Silicon -- Oxygen content -- Congresses.Silicon crystals -- Defects -- Congresses.
Series Statement
- NATO ASI series. Partnership sub-series 3. High technology ;
Other Editions
- Early stages of oxygen precipitation in silicon
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