Ferroelectric Random Access Memories
Fundamentals and Applications (Topics in Applied Physics)
1 edition
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Author
Contributions
- Hiroshi Ishiwara (Editor) - Contributor
- Masanori Okuyama (Editor) - Contributor
- Yoshihiro Arimoto (Editor) - Contributor
Publication
2004-05-27 - Springer
Language
English
Word Count
72,500 words, Guess
Page Count
290 pages
Physical Format
Hardcover
Identifiers
- Open LibraryOL9057015M
- ISBN-139783540407188
- ISBN-103540407189
- OCLC Control Number52765825
- OCLC Control Numberferroelectricran00ishi
and 3 more
- Library of Congress Control Number2003059057
- Goodreads2971393
- LibraryThing7184796
Classifications
- LCCTK7895.M4 F38 2004
Description
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.
First Sentence
The recent development of ferroelectric random access memories (FeRAMs) has shown that extremely high-density ferroelectric memory devices (ULSI) will become commercially feasible within the next few years [1,2,3].
Subjects
Topics
Other Editions
- Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics)
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