Temperverhalten von Elektronen- und Löcherfangstellen in SiO2-Schichten von MOS-Strukturen
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Author
Contributions
- Rheinisch-Westfälische Technische Hochschule Aachen - Contributor
Publication
1983 - , Germany
Language
German
Word Count
0 words, Guess
Page Count
0 pages
Identifiers
- OCLC Control Number46086767
- Open LibraryOL57022263M
Alternate Titles
- Fangstellen in MOS-Strukturen.
Subjects
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