Epitaxy of Semiconductors
Introduction to Physical Principles
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Author
Contributions
- SpringerLink (Online service) - Contributor
Publication
2013 - Springer Berlin Heidelberg, Berlin, Heidelberg, Germany
Language
English
Word Count
81,500 words, Guess
Page Count
326 pages
Physical Format
[electronic resource] :
Identifiers
- Open LibraryOL27036832M
- ISBN-139783642329708
- OCLC Control Numberepitaxysemicondu00pohl
- Library of Congress Control Number2012953380
Classifications
- DDC537.622
- LCCQC610.9-611.8
Description
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
Subjects
Series Statement
- Graduate Texts in Physics
Other Editions
- Epitaxy of Semiconductors: Introduction to Physical Principles
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