Effect of crystal defects on minority carrier diffusion length in 6H SiC measured using the electron beam induced current method
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Author
Contributions
- United States. National Aeronautics and Space Administration. - Contributor
Publication
1997 - National Aeronautics and Space Administration, [Washington, DC, District of Columbia
Language
English
Word Count
0 words, Guess
Page Count
0 pages
Physical Format
Microform
Identifiers
- Open LibraryOL15491546M
Subjects
Topics
Series Statement
- [NASA contractor report] -- 205866.
- NASA contractor report -- NASA CR-205866.
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