Materials Fundamentals of Gate Dielectrics
1 edition
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Contributions
- Alexander A. Demkov (Editor) - Contributor
- Alexandra Navrotsky (Editor) - Contributor
Publication
2005-08-23 - Springer
Language
English
Word Count
119,000 words, Guess
Page Count
476 pages
Physical Format
Hardcover
Identifiers
- Internet Archivematerialsfundame00demk
- ISBN-101402030770
- ISBN-139781402030772
- Goodreads2750214
- Library of Congress Control Number2005281788
and 3 more
- OCLC Control Number61488351
- Better World Books9781402030772
- Open LibraryOL8371320M
Classifications
- LCCQC585 .M42 2005
- LCCQ1-390
First Sentence
Rapid shrinking in device dimensions to follow Moore's law calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs.
Subjects
Topics
Other Editions
- Materials Fundamentals of Gate Dielectrics
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