Contributions

  • Alexander A. Demkov (Editor) - Contributor
  • Alexandra Navrotsky (Editor) - Contributor

Publication

2005-08-23 - Springer

Language

English

Word Count

119,000 words, Guess

Page Count

476 pages

Physical Format

Hardcover

Identifiers

and 3 more

Classifications

  • LCCQC585 .M42 2005
  • LCCQ1-390

First Sentence

Rapid shrinking in device dimensions to follow Moore's law calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs.

Subjects

Other Editions

  • Materials Fundamentals of Gate DielectricsHardcoverSpringer2005-08-23

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