Defect analysis in electron microscopy

Our rough guess is there are 33,500 words in this book.

At a pace averaging 250 words per minute, this book will take 2 hours and 14 minutes to read. With a half hour per day, this will take 5 days to read.

How long will it take you?

Enter your reading speed

You can take one of our WPM reading speed tests to find your reading speed.

Get it on Amazon

We earn a commission on purchases

Author

M. H. Loretto

Contributions

Smallman, R. E., joint author. - Contributor

Publication

1975 - Chapman and Hall, London, New York (State)

Language

English

Word Count

33,500 words, Guess

Page Count

134 pages

Identifiers

Open LibraryOL5201405M
ISBN-100412137607
OCLC Control Number1582682
OCLC Control Numberdefectanalysisin0000lore
Library of Congress Control Number75025615

and 1 more

Goodreads5409857

Classifications

DDC548/.84
LCCQD921 .L67

Subjects

Topics

Defects Crystals Crystals, defects Electron microscopy Electron microscopy.Crystals -- Defects.Electron microscopes

Other Editions

Defect analysis in electron microscopyChapman and Hall1975-01-01

Similar Books

Defects in SiO₂ and related dielectrics: science and technology

edited by G. Pacchioni, L. Skuja, D.L. Griscom.

High resolution electron microscopy of defects in materials: symposium held April 16-18, 1990, San Francisco, California, U.S.A.

editors, Robert Sinclair, David J. Smith, Ulrich Dahmen.

Reader Reviews

No reviews yet for this book.

Be the first to share your thoughts!